to-92s plastic-encapsulate transistors KTC3195 transistor (npn) features z small reverse transfer capacitance z low noise figure maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 4 v i c collector current -continuous 20 ma p c collector power dissipation 400 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 4 v collector cut-off current i cbo v cb =40v, i e =0 0.5 a emitter cut-off current i ebo v eb =4v, i c =0 0.5 a dc current gain h fe v ce =6v, i c =1ma 40 200 transition frequency f t v ce =6v, i c =1ma 300 550 mhz reverse transfer capacitance c re v cb =6v, i e =0, f=1mhz 0.7 pf noise figure nf 2.5 5 db power gain g pe v ce =6v, i c =1ma,f=100mhz 18 db classification of h fe rank r o y range 40-80 70-140 100-200 to-92s 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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